作者：王韬, 万江, 张万里

作者单位：电子科技大学 电子薄膜与集成器件国家重点实验室，四川 成都 610054

关键词：SOI压力传感器;耐高压;提前失效;仿真验证

摘要：

该文面向基于MEMS技术的SOI压力传感器高压失效问题，以SAW器件为对象开展研究，分别对压力传感器的背腔与正面进行加压，测试两种加压方式下SOI压力传感器的极限耐压值。利用测得的极限耐压值对器件内部应力进行有限元仿真，分析器件耐压失效时的内部最大应力。实验与仿真结果表明，当从背腔加压时，器件失效时的内部应力低于预期值。使用有限元方法进行仿真，验证刻蚀槽的底部的楔形结构导致器件背腔根部侧二氧化硅的切应力集中，导致二氧化硅层与器件硅层的脱落，进而造成器件耐压提前失效的猜想。当器件内部最大应力达到410 MPa附近时，将会导致器件破裂失效的发生。

Analysis of high pressure failure of SOI pressure sensor
WANG Tao, WAN Jiang, ZHANG Wanli
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
Abstract: This paper aims to solve the problem of high pressure failure of SOI pressure sensor based on MEMS technology, and took SAW device as the research object. The back cavity and front end face of the pressure sensor were pressurized respectively to test the ultimate endurance pressure value of the SOI pressure sensor under two pressure modes. The internal stress of the device is simulated by finite element method and the internal maximum stress is analyzed. The experimental and simulation results show that the internal stress of the device is lower than the expected value when the pressure is applied to the back cavity. The finite element method was used to simulate and verify that the etched groove at the bottom of the wedge structure would cause shear stress of the concentration of silica at the root end of the backcavity device, which would cause the silica layer and the silicon layer of the device to fall off, and then cause the device to fail ahead of the supposed pressure resistance. When the maximum stress inside the device reaches about 410 MPa, the device will fail.
Keywords: SOI pressure sensor;resistance to high pressure;early failure;simulation verification
2021, 47(6):149-155  收稿日期: 2020-10-28;收到修改稿日期: 2020-12-05
基金项目:
作者简介: 王韬(1987-),男,四川自贡市人,讲师,博士,研究方向为MEMS传感器芯片
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