作者：牟维兵1, 徐曦1, 杨勇2
作者单位：1. 中国工程物理研究院电子工程研究所, 四川绵阳 621900;
2. 中国测试技术研究院, 四川成都 610021
关键词：场效应管; X射线; 剂量增强; 实验测量; 阈电压
摘要：
为了实验精确测量场效应管的X射线剂量增强系数,介绍了如何改进剂量增强系数实验测量的方法和实验测量装置,以及实验测量的详细过程。得到了两种不同类型场效应管的辐照数据,根据实验数据计算了其剂量增强系数。剂量增强效应十分明显,IRF540场效应管在阈电压1.5 V时相对剂量增强系数为16,IRF9530要小些,在阈电压为4 V时相对剂量增强系数约7.5。
Experimental measurement of X-ray dose enhancement factor for field effect transistor
MU Wei-bing1, XU Xi1, YANG Yong2
1. Institute of Electronic Engineering, CAEP, Mianyang 621900, China;
2. Institute of Ionization Irradiation, NIMTT, Chengdu 610021, China
Abstract: In order to measure the X-ray dose enhancement factor (DEF) of the field effect transistor(FET) accurately through experiment, it was introduced how to improve the measuring method and the experimental measuring devices in this article, and the detail process of experimental measurement was described too. The irradiation data of two types of FETs were obtained, and their DEFs of these FETs were calculated according to these data. The results indicated the dose enhancement effects of these FETs were very obvious. The relative DEF of IRF540 FET was 16 under a 1.5 V threshold voltage, and that of IRF9530 FET was relatively small, it was 7.5 under a 4 V threshold voltage.
Keywords: Field effect transistor; X-ray; Dose enhancement; Experimental measurement; Threshold voltage
2008, 34(5): 95-97 收稿日期: 2008-4-2;收到修改稿日期: 2008-6-25
基金项目:
作者简介: 牟维兵(1969-),男,重庆万州市人,副研究员,主要从事抗核加固研究。
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