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采用环形感压薄膜的MEMS电容薄膜真空规设计

3274    2019-01-30

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作者:王呈祥, 韩晓东, 李得天, 成永军, 孙雯君, 李刚

作者单位:兰州空间技术物理研究所 真空技术与物理重点实验室, 甘肃 兰州 730000


关键词:MEMS;电容薄膜真空规;高灵敏度;宽测量范围


摘要:

感压薄膜的结构改良能有效改善MEMS电容薄膜真空规的压力-电容输出特性。为解决MEMS电容薄膜真空规宽量程与高灵敏度相矛盾的问题,设计一种环形结构的感压薄膜,利用有限元的方法分析对比5种环形结构的感压薄膜在不同压力下的变形与应力分布情况。分析认为,同心圆结构的感压薄膜具有最优异的性能,同等感测面积情况下真空规的压力-电容线性输出测量上限能从圆片结构的1.1×103 Pa延伸到同心圆结构的1.2×104 Pa,圆片结构感压薄膜的真空规在1~800 Pa区间内的压力-电容输出非线性度为3.9%,灵敏度为10.1 fF·Pa-1;同心圆结构感压薄膜的真空规结构在1~8 000 Pa区间内的非线性度为3.6%,灵敏度为1.3 fF·Pa-1


Design of MEMS diaphragm capacitive vacuum gauge with an annular sensing film
WANG Chengxiang, HAN Xiaodong, LI Detian, CHENG Yongjun, SUN Wenjun, LI Gang
Science and Technology on Vacuum Technology and Physics Laboratory, Lanzhou Institute of Physics, Lanzhou 730000, China
Abstract: Structure optimizing can effectively enhance pressure-capacitance output performance of MEMS capacitive diaphragm gauge(CDG). In order to solve the conflict between wide measurement range and high sensitivity, a new type of MEMS (CDG)with an annular sensing film was proposed and five types of annular sensing films has been analyzed by using finite element method(FEM). The conclusion that the concentric-circles structure has better mechanism property has been delivered. According to the analyzing results, the measurement range can be stretched from 1.1×103 Pa of the circles-slice structure to 1.2×104 Pa of the concentric-circles structure under identical condition of sensing area. The circles-slice structure has the non-linearity about 3.9% and sensitivity is 10.1 fF·Pa-1 in 1-800 Pa and the concentric-circles structure has the non-linearity of 3.6% and sensitivity is 1.3 fF·Pa-1 in 1-8 000 Pa.
Keywords: MEMS;capacitive diaphragm vacuum gauge;high sensitivity;wide measurement range
2019, 45(1):88-93  收稿日期: 2018-09-15;收到修改稿日期: 2018-10-20
基金项目: 国家自然科学基金重大科研仪器研制项目(61627805);五院CAST基金项目
作者简介: 王呈祥(1993-),男,湖南湘潭市人,硕士研究生,专业方向为真空技术与物理
参考文献
[1] 李得天, 孙雯君, 成永军, 等. MEMS型电容薄膜真空计研究进展[J]. 真空与低温, 2017, 23(2):63-67
[2] 孙雯君, 冯炎, 马奔, 等. 火星探测小型电容薄膜真空计的性能研究[J]. 真空与低温, 2014, 20(1):16-18
[3] HEMNI H, SHOJI S, YOSIMI K, et al. Vacuum packaging for micro sensors by glass-silicon anodic bonding[J]. Sensors and Actuators A, 1994, 43:243-248
[4] CATLING D C. High-sensitivity silicon capacitive sensors for measuring medium-vacuum gas pressure[J]. Sensors and Actuators A, 1998, 64(2):157-164
[5] TIMOSHENKO S, KRIEGER S W.Theory of plates and shells[M].New York:McGraw-Hill College, 1959.
[6] ESAHI M. Silicon micromachining for integrated Microsystems[J]. Vacuum, 1996, 47(6-7):469-474
[7] TADIGADAPA S,ANSARI S M. Applications of high-performance MEMS pressure sensors based on dissolved wafer process proceedings of the sensor[C]//Proceedings Sensors Expo, 1999.
[8] WANG Y L, ESASHI M. The structure for electrostatic capacitive vacuum[J]. Sensors and Actuators, 1998, 66(1-3):213-217
[9] KIM H, JEONG Y G, CHUN K. Improvement of the linearity of a capacitive pressure sensor using an integrated electrode structure[J]. Sensors and Actuators A, 1997, 62(1):586-590
[10] LI G, LI D T, CHENG Y J,et al. Design of pressure-sensing Diaphragm for MEMS Capacitance Diaphragm Gauge Considering Size Effect[J]. AIP advances, 2018, 8(3):201-209
[11] ROSENERGN L S, SⅡDERKVIST J, SMTTH L. Micromachined sensor structure with linear capacitive response[J]. Sensors and Actuators A, 1992, 31(1-3):200-206
[12] ZOU L M, GUO H. Capacitive pressure sensor with circular island structure[J]. Optical and Precision Engineering, 2009, 17(6):1385-1390
[13] MINASHTTA H, ESASHI M. Wide dynamic range silicon diaphragm vacuum sensor by electrostatic servo system[J]. Journal of Vacuum Science & Technology B, 2000, 18(6):2693-2697
[14] HE F, HUANG Q G, QING M. A silicon directly bonded capacitive absolute pressure sensor[J]. Sensors and Actuators A, 2007, 135(2):507-514
[15] ZHOU M X, HUANG Q G, QING M. Modeling design and fabrication of a triple-layered capacitive pressure sensor[J]. Sensors and Actuators A, 2005, 117(1):71-81
[16] CHANG S P, LEE J B, ALLEN M G. Robust capacitive pressure sensor array[J]. Sensors and Actuators A, 2002, 101(1):231-238
[17] PANG C, ZHAO Z, DU L D. Adhesive bonding with SU-8 in a vacuum for capacitive pressure sensors[J]. Sensors and Actuators A, 2008, 147(2):672-676
[18] DING X Y, KO W H,MANSOUR J M. Residual stress and mechanical properties of Boron-doped P+ silicon films[J]. Sensors and Actuators, 1990, 23(1):866-871
[19] SUZUKA S, YAMADA K, NISHIHARA M, et al. Structural analysis of a semiconductor pressure sensor[C]//Proc. 1st Sensor Symp, 1981.
[20] MENG G Q, KO W H. Modeling of circular diaphragm and spreadsheet solution programming for touch model capacitive sensors[J]. Sensors and Actuators A, 1999, 75(3):45-52